TIP162C

The TIP162C is designed as one kind of NPN silicon power transistor that has some points of absolute maximum ratings:(1)Collector-Base Voltage: 320 V;(2)Collector-Emitter Voltage: 320 V;(3)Emitter-Base Voltage: 5.0 V;(4)Collector Current: 10 A;(5)Collector Peak Current (repetitive): 15 A;(6)Base Current: 1 A;(7)Continuous device dissipation at (or below) 25°C case temperature: 50 W;(8)Operating And Storage Junction Temperature Range: -65 to +150 ;(9)Continuous device dissipation at (or below) 25°C free air temperature: 3 W;(10)Lead temperature 3.2 mm from case for 10 seconds: 260 °C.

The electrical characteristics of the TIP162C can be summarized as:(1)Collector Cutoff Current: 1 mA;(2)Emitter Cutoff Current: 100 mA;(3)Forward Current transfer ratio: 200;(4)Collector-Emitter Sustaining Voltage: 2.8 or 2.9 V;(5)parallel diode forward voltage: 3.5 V;(6)Base-Emitter saturation Voltage: 2.2 V.

And the features of this device are:(1)ICEX(sus) 7 A at rated V(BR)CEO; (2)50 W at 25 °C case temperature; (3)10 A continuous collector current; (4)15 A peak collector current; (5)maximum VCE(sat) of 2.8 V at Ic = 6.5 A. If you want to know more information about the TIP162C, please download the datasheet in www.seekic.com or www.chinaicmart.com .