TH58V128FT

The TH58V128FT is designed as one kind of single 3.3 volt 128 Mbit NAND electrically erasable and programmable read only memory (NAND EEPROM) organized as 528 bytes x 32 pages x 1024 blocks. This device has a 528 byte static register which allows the program and reak data to be transferred between the register and the memory cell array in 528 byte increments. The erase operation is implemented in a single block unit.

Features of the TH58V128FT are:(1)organization - memory cell array: 528 x 16K x 8 x 2;(2)organization - register: 528 x 8;(3)mode control: serial input / output and command control;(4)power supply: Vcc = 3.3 V +/- 0.3 V;(5)access time - cell array - register: 7 us max.;(6)access time - serial read cycle: 50 ns min;(7)operating current read (80 ns cycle): 10 mA typ.;(8)operating current program (ave.): 10 mA typ..

The absolute maximum ratings of the TH58V128FT can be summarized as:(1)power supply voltage: -0.6 V to 4.6 V;(2)output buffer power supply: -0.6 V to 4.6 V;(3)input voltage: -0.6 V to 4.6 V;(4)input / output voltage: -0.6 V to Vcc+0.3 V;(5)power dissipation: 0.3 W;(6)storage temperature: -55 to +150 ;(7)soldering temperature (10 s): 260 ;(8)operating temperature: 0 to 70 . If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .