TH58512FT

The TH58512FT is a single 3.3 V 512-Mbit (553,648,128) bit NAND elecrically erasable and programmable read-only memory organized as 528 bytes*32 pages*4096 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes*32 pages).

There are some features of TH58512FT as follows. First, it has the modes of read, reset, auto page program, auto block erase and status read. The second is mode control including serial input/output and command control. Then is about the power supply which is 3.3 V±0.3 V. Next is about the access time (the cell array-register: 25 s max; serial read cycle: 50 ns min).

What comes next is about the absolute maximum ratings of TH58512FT . The VCC (power supply voltage) is from -0.6 to 4.6 V. The VIN (input voltage) is from -0.6 to 4.6 V. The VI/O (input/output voltage) is from -0.6 to VCC+0.3 V (4.6 V). The PD (power dissipation) is 0.3 W. The TSOLDER(soldering temperature (10 s)) is 260. The TSTG (storage temperature) is from -55 to 150. The TOPR (operating temperature) is from 0 to 70.

The following is about the recommended DC operating conditions of TH58512FT . The minimum VCC (power supply voltage) is 3.0 V, the typical is 3.3 V and the maximum is 3.6 V. The minimum VIH (high level input voltage) is 2.0 V and the maximum is VCC+0.3 V. The minimum VIL (low level input voltage) is -0.3 V and the maximum is 0.8 V.