IC E2PROM NAND 3.3V 1-GB FDC22A
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Series: | - | Operating Supply Voltage : | 3.6 V | ||
Manufacturer: | Toshiba | Memory Size: | 128MB |
SYMBOL | PARAMETER | RATING | UNIT |
VCC | Power Supply Voltage | -0.6 to 4.6 | V |
VIN | Input voltage | -0.6 to 4.6 | V |
VI/O | Input/Output Voltage | 0.6 V to VCC +0.3 V ( 4.6 V) | V |
PD | Power Dissipation | 0.3 | w |
Topr | Operating Temperature | 0 to 55 | °C |
Tstg | Storage temperature range | 20 to 65 | °C |
The TH58NS100DC is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 8192 blocks. The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes × 32 pages).
The TH58NS100DC is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed.
The TH58NS100DC is a SmartMediaTM with ID and each device has 128 bit unique ID number embedded in the evice. his unique ID number is applicable to image files, music files, electronic books, and so on where copyright rotection is required.
The data stored in the TH58NS100DC needs to comply with the data format standardized by the SSFDC Forum n order to maintain compatibility with other SmartMediaTM systems.