Series: -
Operating Temperature: 0°C ~ 70°C
Format - Memory: FLASH
Voltage - Supply: 2.7 V ~ 3.6 V
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Speed: 50ns
Memory Size: 1G (128M x 8)
Supplier Device Package: 48-TSOP I
Memory Type: FLASH - NAND
Manufacturer: Toshiba
Interface: Serial
Features: OrganizationMemory cell allay 528 128K 8 2Register 528 8Page size 528 bytesBlock size (16K 512) bytes
ModesRead, Reset, Auto Page ProgramAuto Block Erase, Status ReadMulti Block Program, Multi Block Erase
Mode controlSerial input/outputCommand control
Power supply VCC 2.7 V to 3.6 V
Program/Erase Cycles 1E5 cycle (with ECC)
Access timeCell array to register 25 s maxSerial Read Cycle 50 ns min
Operating currentRead (50 ns cycle) 10 mA typ.Program (avg.) 10 mA typ.Erase (avg.) 10 mA typ.Standby 100 A
PackageTSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)
Pinout
Specifications
| SYMBOL |
RATING |
VALUE |
UNIT |
| VCC |
Power Supply Voltage |
0.6 to 4.6 |
V |
| VIN |
Input Voltage |
0.6 to 4.6 |
V |
| VI/O |
Input/Output Voltage |
0.6 V to VCC 0.3 V ( 4.6 V) |
V |
| PD |
Power Dissipation |
0.3 |
W |
| Tsolder |
Soldering Temperature (10s) |
260 |
°C |
| Tstg |
Storage Temperature |
55 to 150 |
°C |
| Topr |
Operating Temperature |
0 to 70 |
°C |
DescriptionThe TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and ProgrammableRead-Only Memory (NAND E2PROM) organized as 528 bytes 32 pages 8192 blocks. The device has a 528-bytestatic register which allows program and read data to be transferred between the register and the memory cell arrayin 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes 32 pages).
The TH58100 is a serial-type memory device which utilizes the I/O pins for both address and data input/output aswell as for command inputs. The Erase and Program operations are automatically executed making the device mostsuitable for applications such as solid-state file storage, voice recording, image file memory for still cameras andother systems which require high-density non-volatile memory data storage.
TH58100FT Data Sheet
