TH58NVG1S3AFT05

OrganizationMemory cell allay 2112 􀁵 64K 􀁵 8 􀁵 2Register 2112 􀁵 8Page size 2112bytesBlock size (128K 􀀎 4K) bytes
 ModesRead􃧘Reset􃧘Auto Page ProgramAuto Block Erase􃧘Status Read
 Mode controlSerial input􃧛outputCommand control
 Powersupply VCC 􀀠 2.7 V to 3.6 V
 Program/Erase Cycles 1E5 Cycles(With ECC)
 Access timeCell array to register 25 􀁐s􀀃maxSerial Read Cycle 50 ns min
 Operating currentRead (50 ns cycle) 10 mA typ.Program (avg.) 10 mA typ.Erase (avg.) 10 mA typ.Standby 50 􀁐A max
 PackageTSOP I 48-P-1220-0.50􀀂(Weight : 0.53 g typ.)

The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable andProgrammable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 2048 blocks.The device has a 2112-byte static registers which allow program and read data to be transferredbetween the register and the memory cell array in 2112-byte increments. The Erase operation isimplemented in a single block unit (128 Kbytes + 4Kbytes: 2112 bytes x 64 pages).

The TH58NVG1S3A is a serial-type memory device which utilizes the I/O pins for both address and datainput / output as well as for command inputs. The Erase and Program operations are automaticallyexecuted making the device most suitable for applications such as solid-state file storage, voicerecording, image file memory for still cameras and other systems which require high-density nonvolatilememory data storage.