DescriptionThe TD6336F is designed as an automotive 8-bit SI/PO driver IC using a bi-CMOS process characterized by high output withstand voltage.TD6336F has six features. (1)Serial input and 8-stage parallel/ serial output. (2)Serial output allows cascade expansion. (3)ENABLE input for output cont...
TD6336F: DescriptionThe TD6336F is designed as an automotive 8-bit SI/PO driver IC using a bi-CMOS process characterized by high output withstand voltage.TD6336F has six features. (1)Serial input and 8-stage...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
The TD6336F is designed as an automotive 8-bit SI/PO driver IC using a bi-CMOS process characterized by high output withstand voltage.
TD6336F has six features. (1)Serial input and 8-stage parallel/ serial output. (2)Serial output allows cascade expansion. (3)ENABLE input for output control. (4)High output withstand voltage which is min 80V. (5)Large output current which would be max 100mA. (6)Power detection circuit incorporated: the output is disabled when Vdd<3V typ. Those are all the main features.
Some absolute maximum ratings TD6336F have been concluded into several points as follow. (1)Its supply voltage would be from -0.3V to 7V. (2)Its output voltage would be from -0.3V to Vdd+0.3V for SO output. (3)Its output current would be 100mA. (4)Its input voltage would be from -0.3V to Vdd+0.3V. (5)Its power dissipation would be 1.0W. (6Its storage temperature range would be from -55°C to 150°C. (7)Its lead temperature time would be 260°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.
Also some DC electrical characteristics TD6336F are concluded as follow. (1)Its input voltage would be min 0.8Vdd for high and would be max 0.2Vdd for low. (2)Its input current would be max +/-100uA for R, LATCH and would be max +/-1uA for CK, S-IN, E with conditions of Vin from 0V to Vdd. (3)Its output voltage would be min Vdd-0.4V for high and would be max 0.4V for low with conditions of Ioh=+/-1mA. (4)Its output current would be max 100uA for high with conditions of Voh=80V. (5)Its static current consumption would be max 1.0mA with conditions of Vdd=5V and f=0Hz. (6)Its dynamic current consumption TD6336F would be max 5mA with conditions of Vdd=5V and f=1MHz.
It should be noted that toshiba is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the users, when utilizing these products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a product could cause loss of human life, bodily injury or damage to property. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!