TCET4600

Isolation Voltage : 5000 Vrms
Packaging : Tube
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Input Type : AC
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Maximum Collector Emitter Voltage : 70 V
Current Transfer Ratio : 300 %
Package / Case : PDIP-16


Features:

• Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• Low temperature coefficient of CTR
• Rated impulse voltage (transient overvoltage) V_IOTM = 8 kV peak
• Isolation test voltage (partial discharge test voltage) V_pd = 1.6 kV _peak
• Rated isolation voltage (RMS includes DC) V_IOWM = 600 V_RMS
• Rated recurring peak voltage (repetitive) V_IORM = 848 V_peak
• Thickness though insulation 0.75 mm
• Creepage current resistance according to VDE 0303/ IEC 60112 comparative tracking index: CTI 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC



Application

• Computer peripheral interface
• Microprocessor system interface
• Telecom equipment
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
   - for appl. class I - IV at mains voltage 300 V
   - for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-2 (VDE 0884)/ DIN EN 60747-5-
     5 pending.



Specifications

PARAMETER	TEST CONDITION	SYMBOL	VALUE	UNIT
INPUT
Reverse Voltage		VR	6	V
Forward Current		IF	±60	mA
Forward surge current	tp 10 µs	IFSM	± 1.5	A
Power dissipation		Pdiss	100	mW
Junction temperature		Tj	125
OUTPUT
Collector emitter voltage		VCEO	70	V
Emitter collector voltage		VECO	7	V
Collector current		IC	50	mA
Collector peak current	tp/T = 0.5, tp 10 ms	ICM	100	mA
Power dissipation		Pdiss	150	mW
Junction temperature		Tj	125
COUPLER
Isolation test voltage (RMS)	t = 1 min	VISO	5000	VRMS
Total power dissipation		Ptot	250	mW
Operating ambient temperature range		Tamb	- 40 to + 100
Storage temperature range		Tstg	- 55 to + 125
Soldering temperature (2)	mm from case, t 10 s	Tsld	260

Notes
(1) T_amb = 25, unless otherwise specified.
      Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device.
      Functional  operation of the device is not implied at these or any other conditions in excess of those given in
      the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of
      the  time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.



Description

The TCET2600/TCET4600 consists of a phototransistor optically coupled to 2 gallium arsenide infrared-emitting diodes in 8 pin or 16 lead plastic dual inline package. The elements of TCET2600/TCET4600  are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements.