Isolation Voltage
: 5000 Vrms
Packaging
: Tube
Maximum Operating Temperature
: + 100 C
Minimum Operating Temperature
: - 40 C
Maximum Collector Emitter Saturation Voltage
: 0.3 V
Maximum Forward Diode Voltage
: 1.6 V
Maximum Collector Current
: 50 mA
Input Type
: DC
Package / Case
: PDIP-4
Current Transfer Ratio
: 600 %
Maximum Collector Emitter Voltage
: 70 V
Maximum Power Dissipation
: 265 mW
Features: • Extra low coupling capacity - typical 0.2 pF
• High common mode rejection
• Low temperature coefficient of CTR
• CTR offered in 9 groups
• Reinforced isolation provides circuit protection against electrical shock (safety class II)
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Rated impulse voltage (transient overvoltage)VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive)VIORM = 848 Vpeak
• Thickness through insulation 0.75 mm
• Creepage current resistance according to VDE 0303/IEC 60112 comparative tracking index: CTI 175
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECApplication• switch-mode power supplies
• line receiver
• computer peripheral interface
• microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V according to DIN EN 60747-5-5.
Pinout
Specifications
| Coupler |
| Parameter |
Test condition |
Symbol |
Value |
Unit |
| Isolation test voltage (RMS) |
t = 1 min |
VISO |
5000 |
VRMS |
Operating ambient temperature range
|
|
Tamb |
- 40 to + 100 |
|
| Storage temperature range |
|
Tstg |
- 55 to + 125 |
|
| Soldering temperature |
2 mm from case, 10 s |
Tsld |
260 |
|
| Input |
| Reverse voltage |
|
VR |
6 |
V |
| Forward current |
|
IF |
60 |
mA |
| Forward surge current |
tp 10 s |
IFSM |
1.5 |
mA |
| Output |
| Collector emitter voltage |
|
VCEO |
20 |
V |
| Emitter collector voltage |
|
VECO |
7 |
V |
| Collector current |
|
IC |
20 |
mA |
| Collector peak current |
tP/T = 0.5, tP 10 ms |
ICM |
100 |
mW |
Notes
(1) Tamb = 25,unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices (DIP).
DescriptionThe TCET110 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead
plastic dual inline package.
The elements of TCET110 are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.Optocoupler, Phototransistor Output, High Temperarure
TCET1100 Data Sheet
