TCET1200G

Isolation Voltage : 5000 Vrms
Packaging : Tube
Maximum Operating Temperature : + 100 C
Minimum Operating Temperature : - 40 C
Maximum Collector Emitter Saturation Voltage : 0.3 V
Maximum Forward Diode Voltage : 1.6 V
Maximum Collector Current : 50 mA
Maximum Power Dissipation : 250 mW
Input Type : DC
Package / Case : PDIP-4
Current Transfer Ratio : 600 %
Maximum Collector Emitter Voltage : 70 V


Features:

• Extra low coupling capacity - typical 0.2 pF
• High Common Mode Rejection
• CTR offered in 5 groups
• Low temperature coefficient of CTR
• Available in single or dual channel
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC


Application

• UL1577, File No. E76222 System Code U, Double Protection
• CSA 22.2 bulletin 5A, Double Protection
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884) DIN EN 60747-5-5 pending
• FIMKO


Specifications

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.

Parameter	TestConditions	Symbol	Value	Unit
Reverse voltage Forward current Forward surge current Power dissipation Junction temperature	tp 10 s	VR IF IFSM PV Tj	6 60 1.5 100 125	V mA A mW

Description

The TCET1200/ TCET2200 consists of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 4-pin (single channel) or 8-pin plastic dual inline package.