Transistor Output Optocouplers Phototransistor Out Single CTR > 50-600%
TCET1110: Transistor Output Optocouplers Phototransistor Out Single CTR > 50-600%
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Input Type : | DC | Maximum Collector Emitter Voltage : | 70 V | ||
Maximum Collector Emitter Saturation Voltage : | 0.3 V | Isolation Voltage : | 5000 Vrms | ||
Current Transfer Ratio : | 600 % | Maximum Forward Diode Voltage : | 1.6 V | ||
Maximum Collector Current : | 50 mA | Maximum Power Dissipation : | 265 mW | ||
Maximum Operating Temperature : | + 110 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | PDIP-4 | Packaging : | Tube |
• CTR offered in 9 groups
• Isolation materials according to UL94-VO
• Pollution degree 2 (DIN/VDE 0110/resp. IEC 60664)
• Climatic classification 55/100/21 (IEC 60068 part 1)
• Special construction: therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
• Low temperature coefficient of CTR
• Temperature range - 40 to + 110
• Rated impulse voltage (transient overvoltage) VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS
• Rated recurring peak voltage (repetitive) VIORM = 848 peak
• Creepage current resistance according to VDE 0303/ IEC 60112 Comparative Tracking Index: CTI 175
• Thickness through insulation 0.75 mm
• External creepage distance > 8 mm
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
- for appl. class I - IV at mains voltage 300 V
- for appl. class I - III at mains voltage 600 V
according to DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5 pending.
PARAMETER |
TEST CONDITION |
SYMBOL |
VALUE |
UNIT |
INPUT |
|
|
|
|
Reverse voltage |
|
VR |
6 |
V |
Forward current |
|
IF |
60 |
mA |
Forward surge current |
tP 10 µs |
IFSM |
1.5 |
A |
OUTPUT |
|
|
|
|
Collector emitter voltage |
|
VCEO |
70 |
V |
Emitter collector voltage |
|
VECO |
7 |
V |
Collector current |
|
IC |
50 |
mA |
Collector peak current |
tP/T = 0.5, tP 10 ms |
ICM |
100 |
mA |
COUPLER |
|
|
|
|
Isolation test voltage (RMS) |
t = 1 min |
VISO |
5000 |
VRMS |
Operating ambient temperature range |
|
Tamb |
- 40 to + 110 |
|
Storage temperature range |
|
Tstg |
- 55 to + 125 |
|
Soldering temperature |
2 mm from case, 10 s |
Tsld |
260 |
Note
Tamb = 25 , unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
The TCET1110/ TCET1110G consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. The elements of TCET1110/ TCET1110G are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements.