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TCET111

Features: • CTR offered in 9 Groups• Isolation materials according to UL94-VO• Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)• Climatic classification 55/100/21 (IEC 68 part 1)• Special construction: Therefore, extra low coupling capacity of typical 0.2 pF, high Co...

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TCET111: Features: • CTR offered in 9 Groups• Isolation materials according to UL94-VO• Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)• Climatic classification 55/100/21 (IEC 68 pa...

TCET111 Data Sheet

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Part Number:
TCET111
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• CTR offered in 9 Groups
• Isolation materials according to UL94-VO
• Pollution degree 2
   (DIN/VDE 0110 / resp. IEC 664)
• Climatic classification 55/100/21 (IEC 68 part 1)
• Special construction:
   Therefore, extra low coupling capacity of typical
   0.2 pF, high Common Mode Rejection
• Low temperature coefficient of CTR
• Temperature range - 40 to + 110 °C
• Coupling System U
• Rated impulse voltage (transient overvoltage)
   VIOTM = 8 kVpeak
• Isolation test voltage (partial discharge test voltage)
   Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC)
   VIOWM = 600 VRMS (848 Vpeak)
• Rated recurring peak voltage (repetitive)
   VIORM = 600 VRMS
• Creepage current resistance according to VDE
   0303/IEC 112 Comparative Tracking Index: CTI 175
• Thickness through insulation 0.75 mm
• Internal creepage distance > 4 mm
• External creepage distance > 8 mm


Application

Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
• For appl. class I - IV at mains voltage 300 V
• For appl. class I - III at mains voltage 600 V according to VDE 088 4, table 2, suitable for:
  Switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system interface, with operating temperature up to 110°C




Specifications

Parameter Test condition
Symbol
Value
Unit
Emitter
Reverse voltage  
VR
6
V
Forward current  
IF
60
mA
Forward surge current tp 10 s
IFSM
1.5
A
Power dissipation  
PDiss
100
mW
Junction temperature  
Tj
125
Detector
Collector emitter voltage  
VCEO
70
V
Emitter collector voltage  
VECO
7
V
Collector current  
IC
50
mA
Collector peak current tp/T = 0.5, tp 10 ms
ICM
100
mA
Power dissipation  
PDiss
150
mW
Junction temperature  
Tj
125
Coupler
Isolation test voltage (RMS) t = 1 min
VIO
5
kV
Total power dissipation  
Ptot
250
mW
Operating ambient temperature
range		  
Tamb
- 40 to + 110
Storage temperature range  
Tstg
- 55 to + 125
Soldering temperature 2 mm from case t 10 s
Tsd
260

Tamb = 25 °C, unless otherwise specified

Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the devise.Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability.


Description

The TCET111.(G) consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.

The elements of TCET111 are mounted on one lead frame using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.




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