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TCC20L25

Features: ·2·0 GHz ·20 VOLTS ·CLASS A ·OVERLAY GEOMETRY ·GOLD METALLIZED DIE ·COMMON EMITTER CONFIGURATION ·POUT = 2.5W MIN WITH 6.0 dB GAINSpecifications Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCES Collector-Emitter Voltage 25 V VEBO Emitter-Base Volt...

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SeekIC No. : 004515416 Detail

TCC20L25: Features: ·2·0 GHz ·20 VOLTS ·CLASS A ·OVERLAY GEOMETRY ·GOLD METALLIZED DIE ·COMMON EMITTER CONFIGURATION ·POUT = 2.5W MIN WITH 6.0 dB GAINSpecifications Symbol Parameter Value Unit VCBO...

TCC20L25 Data Sheet

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Part Number:
TCC20L25
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·2·0 GHz
·20 VOLTS
·CLASS A
·OVERLAY GEOMETRY
·GOLD METALLIZED DIE
·COMMON EMITTER CONFIGURATION
·POUT = 2.5W MIN WITH 6.0 dB GAIN


Specifications

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCES Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 3.5 V
IC Device Current 0.5 A
PDISS Power Dissipation 20.6 W
TJ Junction Temperature +200 °C
TSTG Storage Temperature - 65 to +150 °C



Description

The SD1855 is a silicon NPN planar transistor designed for high gain linear performance at 2.0 GHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD1855 can be used for applications sucha as telecommunications, radar, ECM, space and other commercial and military systems.




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