TCC20L08

The TCC20L08 is an NPN silicon transistor designed for high gain linear performance at 2.0GHz.

Features of the TCC20L08 are:(1)frequency is 2.0GHz;(2)power out is 0.8W;(3)power gain is 8.0dB;(4)voltage is 20.0V;(5)hermetic stropline package;(6)gold metallized die;(7)overlay die geometry;(8)current is 120mA;(9)class A;(10)common emitter configuration.

The absolute maximum ratings of the TCC20L08 can be summarized as:(1):the symbol is VCEO,the parameter is collector-base voltage,the value is 21,the unit is V;(2):the symbol is VCBO,the parameter is collector-emitter voltage,the value is 40,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.5,the unit is V;(4):the symbol is IC,the parameter is collector current (max),the value is 0.15,the unit is A;(5):the symbol is Ptot,the parameter is total device dissipation at +25,the value is 5.8,the unit is W;(6):the symbol is Tstg,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is Tj,the parameter is junction temperature,the value is +200,the unit is ;(8):the symbol is Rth(j-c),the parameter is junction-case thermal resistance,the value is 30,the unit is /W.