DescriptionThe TCC20L15 is an NPN silicon transistor designed for high gain linear performance at 2.0GHz. Features of the TCC20L15 are:(1)frequency is 2.0GHz;(2)power out is 1.5W;(3)power gain is 7.0dB;(4)voltage is 20.0V;(5)hermetic stropline package;(6)gold metallized die;(7)overlay die geometr...
TCC20L15: DescriptionThe TCC20L15 is an NPN silicon transistor designed for high gain linear performance at 2.0GHz. Features of the TCC20L15 are:(1)frequency is 2.0GHz;(2)power out is 1.5W;(3)power gain is 7...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe TCC2023-16 is an internally input and output matched NPN silicon transistor designe...
The TCC20L15 is an NPN silicon transistor designed for high gain linear performance at 2.0GHz.
Features of the TCC20L15 are:(1)frequency is 2.0GHz;(2)power out is 1.5W;(3)power gain is 7.0dB;(4)voltage is 20.0V;(5)hermetic stropline package;(6)gold metallized die;(7)overlay die geometry;(8)current is 220mA;(9)class A;(10)common emitter configuration.
The absolute maximum ratings of the TCC20L15 can be summarized as:(1):the symbol is VCEO,the parameter is collector-base voltage,the value is 21,the unit is V;(2):the symbol is VCBO,the parameter is collector-emitter voltage,the value is 40,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.5,the unit is V;(4):the symbol is IC,the parameter is collector current (max),the value is 0.25,the unit is A;(5):the symbol is Ptot,the parameter is total device dissipation at +25,the value is 11.7,the unit is W;(6):the symbol is Tstg,the parameter is storage temperature,the value is -65 to +200,the unit is ;(7):the symbol is Tj,the parameter is junction temperature,the value is +200,the unit is ;(8):the symbol is Rth(j-c),the parameter is junction-case thermal resistance,the value is 15,the unit is /W.