TCC2023-6

The TCC2023-6 is an internally input and output matched NPN silicon transistor designed for microwave applications.

Features of the TCC2023-6 are:(1)frequency is 2.0 to 2.3GHz;(2)power out is 6.0W;(3)power gain is 7.8dB;(4)voltage is 24.0V;(5)hermetic package;(6)all gold metallized system;(7)overlay die geometry;(8)high reliability and ruggedniess;(9)low thermal resistance;(10)common base;(11)broadband performance.

The absolute maximum ratings of the TCC2023-6 can be summarized as:(1):the symbol is VCEO,the parameter is collector-base voltage,the value is 15,the unit is V;(2):the symbol is VCBO,the parameter is collector-emitter voltage,the value is 45,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 3.5,the unit is V;(4):the symbol is IC,the parameter is collector current (max),the value is 1.9,the unit is A;(5):the symbol is Ptot,the parameter is total device dissipation at +25,the value is 18.4,the unit is W;(6):the symbol is Tstg,the parameter is storage temperature,the value is -65 to 200,the unit is ;(7):the symbol is Tj,the parameter is junction temperature,the value is 200,the unit is ;(8):the symbol is Rth(j-c),the parameter is junction-case thermal resistance,the value is 9.5,the unit is /W.