TC5066BP

The TC5066BP is designed as C2MOS digital integrated circuit silicon monolithic of 7-high voltage buffer/non inverting type.

Some absolute maximum ratings of TC5066BP have been concluded into several points as follow. The first one is about its DC supply voltage which would be from Vss-0.5V to Vss+20V. The second one is about its input voltage which would be from Vss-0.5V to Vdd+0.5V. The third one is about its output voltage which would be from Vdd-50V to Vdd+0.5V. The fourth one is about its power dissipation which would be 300mW. The fifth one is about its DC input current which would be ±10mA. The sixth one is about its storage temperature range which would be from -65°C to +150°C. The seventh one is about its lead temperature / time which would be 260°C / 10 sec. The eighth one is about its recommended supply voltage which would be min 3V and max 18V. The ninth one is about its recommended input voltage which would be min 0V and max Vdd V. The tenth one is about its operating temperature which would be from -40°C to 85°C.

And also some electrical characteristics about TC5066BP. For the Vdd=5V the first one is about its high level output voltage which would be min 4.95V and typ 5.00V. The second one is about its high level output current which would be min -5mA and typ -10mA. The third one is about its high level input voltage which would be min 4.0V. The fourth one is about its low level input voltage which would be max 1.0V. The fifth one is about its output off leak current which would be typ 0.01uA and max 3uA at Vdd=15V. The sixth one is about its quiescent supply current which would be typ 0.005uA and max 4.0uA.

Also some switching characteristics about TC5066BP. For the Vdd=5V the first one is about its output rise time which would be typ 100ns and max 200ns. The second one is about its output fall time which would be typ 5.0us and max 8.0us. The third one is about its input capacity which would be typ 5pF and max 7.5pF. And so on. For more information about TC5066BP please contact us.