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TC2182

Features: • 0.5 dB Typical Noise Figure at 12 GHz• High Associated Gain:Ga = 13 dB Typical at 12 GHz• Lg = 0.25 m, Wg = 160 m• 100 % DC Tested• Micro-X Metal Ceramic PackageSpecifications Symbol Parameter Rating VDS Drain-Source Voltage 5.0 V VGS Gate-...

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SeekIC No. : 004513490 Detail

TC2182: Features: • 0.5 dB Typical Noise Figure at 12 GHz• High Associated Gain:Ga = 13 dB Typical at 12 GHz• Lg = 0.25 m, Wg = 160 m• 100 % DC Tested• Micro-X Metal Ceramic Pa...

TC2182 Data Sheet

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Part Number:
TC2182
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain:
Ga = 13 dB Typical at 12 GHz
• Lg = 0.25 m, Wg = 160 m
• 100 % DC Tested
• Micro-X Metal Ceramic Package


Specifications

Symbol Parameter Rating
VDS Drain-Source Voltage 5.0 V
VGS Gate-Source Voltage -3.0 V
IDS Drain Current IDSS
IGS Gate Current 160 A
Pin RF Input Power, CW 14 dBm
PT Continuous Dissipation 150 mW
TCH Channel Temperature 175 °C
TSTG Storage Temperature - 65 °C to +175 °C



Description

The  TC2182  is a high performance  field effect transistor housed in a  ceramic micro-x package with TC1102 PHEMT Chip. It has very low noise figure, high  associated  gain  and  high dynamic  range  that  makes this device suitable for use in low noise amplifiers.  All devices are 100 % DC tested  to  assure consistent quality.




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