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TC2181

Features: • 0.5 dB Typical Noise Figure at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• 18 dBm Typical Power at 12 GHz• 13 dB Typical Linear Power Gain at 12 GHz• Breakdown Voltage : BVDGO 9V• Lg = 0.25 m, Wg = 160 m• 100 % DC Tested•...

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SeekIC No. : 004513489 Detail

TC2181: Features: • 0.5 dB Typical Noise Figure at 12 GHz• High Associated Gain: Ga = 12 dB Typical at 12 GHz• 18 dBm Typical Power at 12 GHz• 13 dB Typical Linear Power Gain at 12 G...

TC2181 Data Sheet

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Part Number:
TC2181
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 0.5 dB Typical Noise Figure at 12 GHz
• High Associated Gain:
      Ga = 12 dB Typical at 12 GHz
• 18 dBm Typical Power at 12 GHz
• 13 dB Typical Linear Power Gain at 12 GHz
• Breakdown Voltage : BVDGO 9V
• Lg = 0.25 m, Wg = 160 m
• 100 % DC Tested
• Micro-X Metal Ceramic Package




Specifications

Symbol Parameter Rating
VDS

VGS		 Drain-Source Voltage

Gate-Source Voltage		 7.0 V

-3.0 V
IDS

IGS

Pin		 Drain Current

Gate Current

RF Input Power, CW		 IDSS

160 A

14 dBm
PT

TCH

TSTG		 Continuous Dissipation

Channel Temperature

Storage Temperature		 150 mW

175

- 65 to +175



Description

The  TC2181  is a high performance  field effect transistor housed in a  ceramic micro-x package with TC1101 PHEMT Chip.  TC2181 has very low noise figure, high  associated  gain  and  high dynamic  range  that makes this device suitable for use in low noise amplifiers.  All devices are 100 % DC tested  to  assure consistent quality.




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