Features: · Industry-standard x 4 pinouts and timing functions· power supply : T2316405A 2.6V(±0.2V) T2316407A 3.3V(±0.3V)· All device pins are TTL- compatible.· 2048-cycle refresh in 32 ms.· Refresh modes:RAS only,CAS BEFORERAS (CBR) and HIDDEN.· Extended data-out (EDO) PAGE MODE access cycle.Pin...
T2316407A: Features: · Industry-standard x 4 pinouts and timing functions· power supply : T2316405A 2.6V(±0.2V) T2316407A 3.3V(±0.3V)· All device pins are TTL- compatible.· 2048-cycle refresh in 32 ms.· Refres...
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Parameter |
Symbol |
Value |
Unit |
Voltage on Any Pin Relative To Vss |
VT |
-0.5 to 4.6 |
V |
Supply Voltage Relative To Vss |
Vcc |
-0.5 to 4.6 |
V |
Short circuit Output Current |
Iout |
50 |
mA |
Power Dissipation |
PT |
1 |
W |
Operating Temperature |
TOPR |
0 to 70 |
°C |
Storage Temperature |
Tstg |
-55 to 125 |
°C |
The T2316405A and T2316407A is a randomly accessed solid state memory containing 16,777,216 bits organized in a x 4 configuration. It offers Fast Page mode with Extended Data Output (EDO).
During READ or WRITE cycles, each of the 4 memory bits (1 bit per I/O) is uniquely addressed through the 22 address bits, which are entered 11 bits (A0-A10) at a time. RAS latches the first 11 bits and CAS latches the latter 11 bits.
A READ or WRITE cycle is selected with the WE input. A logic HIGH on WE dictates READ mode while a logic LOW on WE dictates WRITE mode. During a WRITE cycle, data -in is latched by the falling edge of WE or CAS , whichever occurs last. When WE goes Low prior to CAS going LOW ( EARLY WRITE cycle), the output pins of T2316405A and T2316407A remain open (High-Z) until the next CAS cycle.
A Late Write or Read-Modify-Write occurs. When WE falls after CAS was taken LOW (Late Write cycle). OE must be taken HIGH to disable the data-outputs prior to applying input data.
The four data T2316405A and T2316407A inputs and four data outputs are routed through four pins using common I/O, and pin direction is controlled by WE and OE .