SI9424DY

MOSFET Single P-Ch 20V/10V

product image

SI9424DY Picture
SeekIC No. : 00162256 Detail

SI9424DY: MOSFET Single P-Ch 20V/10V

floor Price/Ceiling Price

Part Number:
SI9424DY
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 20 V
Gate-Source Breakdown Voltage : +/- 10 V Continuous Drain Current : - 8 A
Resistance Drain-Source RDS (on) : 0.019 Ohms Configuration : Single Quad Drain Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Drain-Source Breakdown Voltage : - 20 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 10 V
Continuous Drain Current : - 8 A
Resistance Drain-Source RDS (on) : 0.019 Ohms


Features:

• -8.0 A, -20 V. RDS(on) = 0.024 W @ VGS = -4.5 V
                         RDS(on) = 0.032 W @ VGS = -2.5 V.
• Low gate charge (23nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability.



Application

• DC/DC converter
• Load switch
• Battery Protection



Pinout

  Connection Diagram


Specifications

Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
±10
V
ID
Drain Current - Continuous (Note 1a)
                     - Pulsed
-8.0
A
-50
PD
Power Dissipation for Single Operation (Note 1a)
                                                    (Note 1b)
                                                    (Note 1c)
2.5
W
1.2
1
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150



Description

This Si9424DY P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

These Si9424DY devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.




Parameters:

Technical/Catalog InformationSI9424DY
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs24 mOhm @ 8A, 4.5V
Input Capacitance (Ciss) @ Vds 2260pF @ 10V
Power - Max1W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs33nC @ 5V
Package / Case8-SOIC
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names SI9424DY
SI9424DY
SI9424DYCT ND
SI9424DYCTND
SI9424DYCT



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Integrated Circuits (ICs)
Cables, Wires
Tapes, Adhesives
803
Power Supplies - External/Internal (Off-Board)
Power Supplies - Board Mount
Soldering, Desoldering, Rework Products
View more