MOSFET Single P-Ch 20V/10V
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | - 8 A | ||
Resistance Drain-Source RDS (on) : | 0.019 Ohms | Configuration : | Single Quad Drain Triple Source | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOIC-8 Narrow | Packaging : | Reel |
Symbol |
Parameter |
Ratings |
Units |
VDSS |
Drain-Source Voltage |
-20 |
V |
VGSS |
Gate-Source Voltage |
±10 |
V |
ID |
Drain Current - Continuous (Note 1a) - Pulsed |
-8.0 |
A |
-50 | |||
PD |
Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) |
2.5 |
W |
1.2 | |||
1 | |||
TJ, Tstg |
Operating and Storage Junction Temperature Range |
-55 to +150 |
This Si9424DY P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These Si9424DY devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Technical/Catalog Information | SI9424DY |
Vendor | Fairchild Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Rds On (Max) @ Id, Vgs | 24 mOhm @ 8A, 4.5V |
Input Capacitance (Ciss) @ Vds | 2260pF @ 10V |
Power - Max | 1W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 33nC @ 5V |
Package / Case | 8-SOIC |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | SI9424DY SI9424DY SI9424DYCT ND SI9424DYCTND SI9424DYCT |