MOSFET 60V 3.5A 3W
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 60 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3.5 A |
Resistance Drain-Source RDS (on) : | 0.15 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT |
Package / Case : | SO-8 |
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | 60 | V | |
Gate-Source Voltage | VGS | 20 | ||
Continuous Drain Current(TJ = 150)a | TA = 25 | ID | 3.5 | A |
TA = 70 | 3.0 | |||
Pulsed Drain Current | IDM | 30 | ||
Continuous Source Current (Diode Conduction)a | IS | 2.5 | ||
Maximum Power Dissipationa | TA = 25 | PD | 3.0 | W |
TA = 70 | 2.1 | |||
Operating Junction and Storage Temperature Range | TJ,Tstg | 55 to 175 |