MOSFET 20V 2.5A 2.5W
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V |
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 2.5 A |
Resistance Drain-Source RDS (on) : | 0.25 Ohms | Configuration : | Single |
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT |
Package / Case : | SO-8 |
Parameter | Symbol | Limit | Unit | |
Drain-Source Voltage | VDS | -20 | V | |
Gate-Source Voltage | VGS | ±20 | ||
Continuous Drain Current (TJ = 175°C)a | TA = 25°C | ID | ±2.5 | A |
TA = 70°C | ±2.0 | |||
Pulsed Drain Current(10 s Pulse Width) | IDM | ±10 | ||
Continuous Source Current (Diode Conduction)a | IS | -2.0 | ||
Maximum Power DissipationaMOSFET)a, b | TA = 25°C | PD | 2.5 | W |
TA = 70°C | 1.6 | |||
Operating Junction and Storage Temperature Range | TJ, Tstg | 55 to 150 | °C |