SI6933DQ

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : - 30 V
Package / Case : TSSOP-8
Continuous Drain Current : - 3.5 A
Configuration : Dual Dual Source
Resistance Drain-Source RDS (on) : 28 m Ohms


Features:

• 3.5 A, 30 V, R_DS(ON) = 45 m @ V_GS = 10 V.
                          R_DS(ON) = 85 m @ V_GS = 4.5V.
• Extended V_GSS range (±20V) for battery applications
• Low gate charge (8nC typical)
• High performance trench technology for extremely
   low R_DS(ON)
• Low profile TSSOP-8 package


Application

• Load switch
• Battery protection
• DC/DC conversion
• Power management


Pinout




Specifications

Symbol	Parameter		Ratings	Units
VDSS	Drain-Source Voltage		-30	V
VGSS	Gate-Source Voltage		±20	V
ID	Drain Current Continuous	(Note 1a)	-3.5	A
	Pulsed		-20
PD	Power Dissipation	(Note 1a)	1.0	W
		(Note 1b)	0.6
TJ, TSTG	Operating and Storage Junction Temperature Range		-55 to +150	°C

Description

This P-Channel MOSFET Si6933DQ is a rugged gate version of Fairchild's Semiconductor's advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V 20V).