Si6901DQ Selling Leads, Price trend, Si6901DQ DataSheet download, circuit diagram from SeekIC.com

Features: • P-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C Temperature Range• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristic...

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SeekIC No. : 004490586 Detail

Si6901DQ: Features: • P-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C ...

Si6901DQ Data Sheet

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Part Number:: Si6901DQ
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/12/22

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MOSFET DUAL P-CH 12V (D-S)

Product Details

Description

Features:

• P-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery
Characteristics

Description

The attached spice model of the Si6901DQ describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network of the Si6901DQ is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.

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Si6901DQ

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