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SI4947DY

MOSFET 30V 3.5A 2W

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SeekIC No. : 00164725 Detail

SI4947DY: MOSFET 30V 3.5A 2W

SI4947DY Data Sheet

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Part Number:
SI4947DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 85 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SOIC-8 Narrow
Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 85 mOhms


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 175°C)a TA = 25°C ID ±3.5 A
TA = 70°C ±2.8
Pulsed Drain Current(10 s Pulse Width) IDM ±20
Continuous Source Current (Diode Conduction)a IS 1.7
Maximum Power DissipationaMOSFET)a, b TA = 25°C PD 2 W
TA = 70°C 1.3
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150 °C



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