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Si4900DY

Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C Temperature Range• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristic...

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SeekIC No. : 004490372 Detail

Si4900DY: Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS• Apply for both Linear and Switching Application• Accurate over the −55 to 125°C ...

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Part Number:
Si4900DY
Supply Ability:
5000

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Upload time: 2024/11/22

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Product Details

Description



Features:

• N-Channel Vertical DMOS
• Macro Model (Subcircuit Model)
• Level 3 MOS
• Apply for both Linear and Switching Application
• Accurate over the −55 to 125°C Temperature Range
• Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics


Description

The attached spice model Si4900DY describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.

A novel gate-to-drain feedback capacitance network Si4900DY is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.




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