SI4900DY-T1-GE3, US $ .27-.44 , Vishay/Siliconix, SI4900DY-T1-GE3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00156481 Detail

SI4900DY-T1-GE3: MOSFET 60V 5.3A 3.1W 58mohm @ 10V

SI4900DY-T1-GE3 Data Sheet

US $ .27~.44 / Piece | Get Latest Price

Part Number:: SI4900DY-T1-GE3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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0~1220
1220~2500
2500~5000
5000~7500

Unit Price
$.44
$.29
$.28
$.27

Processing time
15 Days
15 Days
15 Days
15 Days

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Upload time: 2024/11/22

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Recent History
What is this?

Si4900DY evaluate
Features: • N-Channel Vertical DMOS• Macro Model (Subcircuit Model)• Level 3 MOS...
SI4900DY-T1-E3 evaluate
US $.45 - .82 / Piece

MOSFET 60V 5.3A 3.1W
Si4904DY evaluate
DescriptionDual N-Channel 40-V MOSFET Si4904DY

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	60 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	4.3 A
Resistance Drain-Source RDS (on) :	58 mOhms	Configuration :	Dual
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Package / Case : SOIC-8 Narrow
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 4.3 A
Resistance Drain-Source RDS (on) : 58 mOhms

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SI4900DY-T1-GE3

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