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SI4925BDY

MOSFET 30V 7.1A 2W

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SeekIC No. : 00166560 Detail

SI4925BDY: MOSFET 30V 7.1A 2W

SI4925BDY Data Sheet

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Part Number:
SI4925BDY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 5.3 A
Resistance Drain-Source RDS (on) : 25 mOhms Configuration : Dual
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow    

Description

Packaging :
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Configuration : Dual
Continuous Drain Current : 5.3 A
Resistance Drain-Source RDS (on) : 25 mOhms
Package / Case : SOIC-8 Narrow


Features:

·TrenchFET® Power MOSFET
·Advanced High Cell Density Process


Application

· Load Switches
  - Notebook PCs
  - Desktop PCs
  - Game Stations


Pinout

Connection Diagram


Specifications

Parameter
Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS −30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25 ID -7.1 -5.3 A
TA = 70 -5.7 -4.3
Pulsed Drain Current IDM -40
continuous Source Current (Diode Conduction)a IS −1.7 −0.9
Maximum Power Dissipationa TA = 25 PD 2.0 1.1 W
TA = 70 1.3 0.7
Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150



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