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SI4888DY

MOSFET 30V 16A 3.5W

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SeekIC No. : 00164788 Detail

SI4888DY: MOSFET 30V 16A 3.5W

SI4888DY Data Sheet

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Part Number:
SI4888DY
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 16 A
Resistance Drain-Source RDS (on) : 7 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOIC-8 Narrow Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 7 mOhms
Continuous Drain Current : 16 A
Package / Case : SOIC-8 Narrow


Pinout

Connection Diagram


Specifications

Parameter Symbol 10 secs Steady State Unit
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20
Continuous Drain Current (TJ = 150)a TA = 25

 

ID

 16 11 A
TA = 70 13 8
Pulsed Drain Current IDM ±50
Continuous Source Current (Diode Conduction)a IS 3.0 1.40
Maximum Power Dissipationaa TA = 25 PD 3.5 16 W
TA = 70 2.2 1.0
Operating Junction and Storage Temperature Range TJ, Tstg 55 to 150



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