Si4800 Selling Leads, Price trend, Si4800 DataSheet download, circuit diagram from SeekIC.com

Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment applications.PinoutSpecifications Symbol Parameter Conditions Typ Max Unit VDS drain-...

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SeekIC No. : 004490345 Detail

Si4800: Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment...

Si4800 Data Sheet

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Part Number:: Si4800
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/25

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Recent History
What is this?

SI4800,518 evaluate
MOSFET N-CH 30V 9A SOT96-1
SI4800BDY-T1-E3 evaluate
US $.31 - .46 / Piece

MOSFET 30V 9A 2.5W
SI4800BDY-T1-GE3 evaluate
US $.3 - .44 / Piece

MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V

Product Details

Description

Features:

· Low on-state resistance
· Fast switching
· TrenchMOS™ technology.

Application

· DC to DC convertors
· DC motor control
· Lithium-ion battery applications
· Notebook PC
· Portable equipment applications.

Pinout

Connection Diagram

Specifications

Symbol	Parameter	Conditions	Typ	Max	Unit
V_DS	drain-source voltage (DC)	Tj = 25 to 150 °C	-	30	V
I_D	drain current	Tsp = 25 °C; Figure 2 and 3	-	9	A
P_tot	total power dissipation	Tsp = 25 °C; Figure 1	-	2.5	W
T_j	junction temperature			150	°C
RDSon	drain-source on-state resistance	VGS = 10 V; ID = 9 A; Tj = 25 °C	15.5	18.5	m
RDSon	drain-source on-state resistance	VGS = 4.5 V; ID = 7 A; Tj = 25 °C	27.5	33	m

Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: Si4800 in SOT96-1 (SO8).

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Si4800

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