Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment applications.PinoutSpecifications Symbol Parameter Conditions Typ Max Unit VDS drain-...
Si4800: Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment...
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Symbol | Parameter | Conditions | Typ | Max | Unit |
VDS | drain-source voltage (DC) | Tj = 25 to 150 °C | - | 30 | V |
ID | drain current | Tsp = 25 °C; Figure 2 and 3 | - | 9 | A |
Ptot | total power dissipation | Tsp = 25 °C; Figure 1 | - | 2.5 | W |
Tj | junction temperature | 150 | °C | ||
RDSon | drain-source on-state resistance | VGS = 10 V; ID = 9 A; Tj = 25 °C | 15.5 | 18.5 | m |
VGS = 4.5 V; ID = 7 A; Tj = 25 °C | 27.5 | 33 |