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Si4800

Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment applications.PinoutSpecifications Symbol Parameter Conditions Typ Max Unit VDS drain-...

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SeekIC No. : 004490345 Detail

Si4800: Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· DC motor control· Lithium-ion battery applications· Notebook PC· Portable equipment...

Si4800 Data Sheet

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Part Number:
Si4800
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·  Low on-state resistance
·  Fast switching
·  TrenchMOS™ technology.


Application

·  DC to DC convertors
·  DC motor control
·  Lithium-ion battery applications
·  Notebook PC
·  Portable equipment applications.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 °C - 30 V
ID drain current Tsp = 25 °C; Figure 2 and 3 - 9 A
Ptot total power dissipation Tsp = 25 °C; Figure 1 - 2.5 W
Tj junction temperature   150 °C
RDSon drain-source on-state resistance VGS = 10 V; ID = 9 A; Tj = 25 °C 15.5 18.5 m
VGS = 4.5 V; ID = 7 A; Tj = 25 °C 27.5 33



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.
Product availability: Si4800 in SOT96-1 (SO8).


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