SI4800BDY-T1-E3, US $ .31-.46 , Vishay/Siliconix, SI4800BDY-T1-E3 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00149737 Detail

SI4800BDY-T1-E3: MOSFET 30V 9A 2.5W

SI4800BDY-T1-E3 Data Sheet

US $ .31~.46 / Piece | Get Latest Price

Part Number:: SI4800BDY-T1-E3
Mfg:: Vishay/Siliconix
Supply Ability:: 5000

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$.46
$.35
$.33
$.31

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15 Days
15 Days
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Upload time: 2024/11/23

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Recent History
What is this?

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Features: · Low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC t...
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MOSFET N-CH 30V 9A SOT96-1
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US $.3 - .44 / Piece

MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V

Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	30 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	6.5 A
Resistance Drain-Source RDS (on) :	18.5 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SOIC-8 Narrow	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Package / Case : SOIC-8 Narrow
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 6.5 A
Resistance Drain-Source RDS (on) : 18.5 mOhms

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SI4800BDY-T1-E3

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