STY60NM50

MOSFET N-Ch 500 Volt 60 Amp

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STY60NM50: MOSFET N-Ch 500 Volt 60 Amp

floor Price/Ceiling Price

US $ 9.28~13.17 / Piece | Get Latest Price
Part Number:
STY60NM50
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
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  • 10~100
  • 100~250
  • Unit Price
  • $13.17
  • $11.07
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  • $9.28
  • Processing time
  • 15 Days
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Upload time: 2024/11/7

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : Max247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 60 A
Package / Case : Max247
Resistance Drain-Source RDS (on) : 0.05 Ohms


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

500 V
VDGR

Drain- gate Voltage (RGS = 20 k)

500 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

60 A
ID

Drain Current (continuous) at Tc = 100

37.8 A
IDM(`)

Drain Current (pulsed)

240 A
PTOT

Total Dissipation at Tc = 25

560 W

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=15K)

6

KV

  Derating Factor

 4.5

 W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

15

V/ns

Tstg

Storage Temperature

-65 to 150
Tj

Max. Operating Junction Temperature

150
(`)Pulse width limited by safe operating area
(1)ISD 60A, di/dt 400A/s, VDD V(ER)DSS, Tj TJMAX.



Description

The MDmesh™ STY60NM50 is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.




Parameters:

Technical/Catalog InformationSTY60NM50
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs50 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 7500pF @ 25V
Power - Max560W
PackagingTube
Gate Charge (Qg) @ Vgs266nC @ 10V
Package / CaseMAX247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STY60NM50
STY60NM50
497 2775 5 ND
49727755ND
497-2775-5



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