STY60NK30Z

MOSFET N-Ch 300 Volt 60 Amp Zener SuperMESH3

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SeekIC No. : 00151362 Detail

STY60NK30Z: MOSFET N-Ch 300 Volt 60 Amp Zener SuperMESH3

floor Price/Ceiling Price

US $ 4.7~6.87 / Piece | Get Latest Price
Part Number:
STY60NK30Z
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $6.87
  • $5.81
  • $5.15
  • $4.7
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Upload time: 2024/11/7

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 0.045 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : Max247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 60 A
Package / Case : Max247
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 0.045 Ohms


Features:

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.




Application

`HIGH CURRENT, HIGH EFFICIENCY SWITCHING DC/DC CONVETERS FOR PLASMA TV's
`IDEAL FOR OFF-LINE POWER SUPPLIES,ADAPTORS AND PFC



Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

300 V
VDGR

Drain- gate Voltage (RGS = 20 k)

300 V
VGS

Gate-source Voltage

±30 V
ID

Drain Current (continuous) at Tc = 25

60 A
ID

Drain Current (continuous) at Tc = 100

37.5 A
IDM(.)

Drain Current (pulsed)

240 A
PTOT

Total Dissipation at Tc = 25

450 W

Derating Factor

3.57 W/

VESD(G-S)

Gate source ESD(HBM-C=100pF, R=1.5K)

6000

V

dv/dt(1)

Peak Diode Recovery voltage slope

4.5

V/ns

Tj
Tstg

Operating Junction Temperature
Storage Temperature

-55 to 150
(`)Pulse width limited by safe operating area
(1)ISD 60A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX.



Description

The SuperMESH™ series STY60NK30Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements
ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.




Parameters:

Technical/Catalog InformationSTY60NK30Z
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs45 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 7200pF @ 25V
Power - Max450W
PackagingTube
Gate Charge (Qg) @ Vgs220nC @ 10V
Package / CaseMAX247?
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STY60NK30Z
STY60NK30Z
497 4432 5 ND
49744325ND
497-4432-5



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