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STW19NM65N

MOSFET N-channel 650V

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SeekIC No. : 00151943 Detail

STW19NM65N: MOSFET N-channel 650V

STW19NM65N Data Sheet

floor Price/Ceiling Price

US $ 2.37~3.79 / Piece | Get Latest Price
Part Number:
STW19NM65N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.79
  • $3.4
  • $2.74
  • $2.37
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 15.5 A
Resistance Drain-Source RDS (on) : 0.27 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.27 Ohms
Continuous Drain Current : 15.5 A


Parameters:

Technical/Catalog InformationSTW19NM65N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C15.5A
Rds On (Max) @ Id, Vgs270 mOhm @ 7.75A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 50V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs55nC @ 10V
Package / CaseTO-247-3
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STW19NM65N
STW19NM65N
497 7033 5 ND
49770335ND
497-7033-5



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