STW19NM65N, US $ 2.37-3.79 , STMicroelectronics, STW19NM65N DataSheet download, circuit diagram from SeekIC.com

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STW19NM65N: MOSFET N-channel 650V

STW19NM65N Data Sheet

US $ 2.37~3.79 / Piece | Get Latest Price

Part Number:: STW19NM65N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	650 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	15.5 A
Resistance Drain-Source RDS (on) :	0.27 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-247
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.27 Ohms
Continuous Drain Current : 15.5 A

Parameters:

Technical/Catalog Information	STW19NM65N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	15.5A
Rds On (Max) @ Id, Vgs	270 mOhm @ 7.75A, 10V
Input Capacitance (Ciss) @ Vds	1900pF @ 50V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	55nC @ 10V
Package / Case	TO-247-3
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STW19NM65N STW19NM65N 497 7033 5 ND 49770335ND 497-7033-5

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STW19NM65N

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