MOSFET N Ch 600V 0.270 ohm 14A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 14 A | ||
Resistance Drain-Source RDS (on) : | 0.299 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Technical/Catalog Information | STW15NM60N |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 14A |
Rds On (Max) @ Id, Vgs | 299 mOhm @ 7A, 10V |
Input Capacitance (Ciss) @ Vds | 1250pF @ 50V |
Power - Max | 125W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 37nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW15NM60N STW15NM60N 497 7618 5 ND 49776185ND 497-7618-5 |