Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-247
Resistance Drain-Source RDS (on)
: 0.75 Ohms
Drain-Source Breakdown Voltage
: 800 V
Continuous Drain Current
: 10.5 A
Features: The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
Application· HIGH CURRENT, HIGH SPEED SWITCHING
· IDEAL FOR OFF-LINE POWER SUPPLIESSpecifications
| Symbol |
Parameter |
Value |
Unit |
VDS
|
Drain-source Voltage (VGS = 0) |
800 |
V |
| VDGR |
Drain- gate Voltage (RGS = 20 k) |
800 |
V |
| VGS |
Gate-source Voltage |
±30 |
V |
| ID |
Drain Current (continuous) at Tc = 25 |
10.5 |
A |
| ID |
Drain Current (continuous) at Tc = 100 |
6.6 |
A |
| IDM(.) |
Drain Current (pulsed) |
42 |
A |
| PTOT |
Total Dissipation at Tc = 25 |
190 |
W |
|
Derating Factor |
1.51 |
W/ |
|
VESD(G-S) |
Gate source ESD(HBM-C=100pF, R=1.5K) |
6000 |
V |
|
dv/dt(1) |
Peak Diode Recovery voltage slope |
4.5 |
V/ns |
Tj
Tstg |
Operating Junction Temperature
Storage Temperature |
-55 to 150 |
|
(•)Pulse width limited by safe operating area
(1)ISD 10.5A, di/dt 200A/µs, VDD V(BR)DSS, Tj TJMAX.
(*)Limited only by maximum temperature allowedDescriptionThe SuperMESH™ series STW12NK80Z is obtained through an extreme optimization of ST's well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
Parameters: | Technical/Catalog Information | STW12NK80Z |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 10.5A |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 5.25A, 10V |
| Input Capacitance (Ciss) @ Vds | 2620pF @ 25V |
| Power - Max | 190W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 87nC @ 10V |
| Package / Case | TO-247-3 |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | STW12NK80Z
STW12NK80Z
497 3256 5 ND
49732565ND
497-3256-5
|
STW12NK80Z Data Sheet
