MOSFET POWER MOSFET
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 110 A | ||
Resistance Drain-Source RDS (on) : | 10.5 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-247 | Packaging : | Tube |
Technical/Catalog Information | STW120NF10 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 110A |
Rds On (Max) @ Id, Vgs | 10.5 mOhm @ 60A, 10V |
Input Capacitance (Ciss) @ Vds | 5200pF @ 25V |
Power - Max | 312W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 233nC @ 10V |
Package / Case | TO-247-3 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STW120NF10 STW120NF10 497 5166 5 ND 49751665ND 497-5166-5 |