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STU10NM65N

MOSFET N-Channel 650V Power MDmesh

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SeekIC No. : 00162764 Detail

STU10NM65N: MOSFET N-Channel 650V Power MDmesh

STU10NM65N Data Sheet

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Part Number:
STU10NM65N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 9 A
Resistance Drain-Source RDS (on) : 0.48 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : IPAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 9 A
Package / Case : IPAK
Resistance Drain-Source RDS (on) : 0.48 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationSTU10NM65N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25° C9A
Rds On (Max) @ Id, Vgs480 mOhm @ 4.5A, 10V
Input Capacitance (Ciss) @ Vds 850pF @ 50V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseIPak, TO-251, DPak, VPak (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STU10NM65N
STU10NM65N



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