STP4NK60ZFP

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220FP
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 4 A
Resistance Drain-Source RDS (on) : 2000 mOhms


Application

HIGH CURRENT, HIGH SPEED SWITCHING
IDEAL FOR OFF-LINE POWER SUPPLIES,
ADAPTORS AND PFC
LIGHTING


Specifications

Symbol	Parameter	Value			Unit
		STP4NK60Z STB4NK60Z STB4NK60Z-1	STP3NK60ZFP	STD4NK60Z STD4NK60Z-1
VDS	Drain-source Voltage (VGS =0)	600			V
VDGR	Drain-gate Voltage (RGS =20kΩ)	600			V
VGS	Gate- source Voltage	± 30			V
ID	Drain Current (continuous) at TC = 25°C	4	4 (*)	4 (*)	A
ID	Drain Current (continuous) at TC =100°C	2.5	2.5 (*)	2.5 (*)	A
IDM (· )	Drain Current (pulsed)	16	16 (*)	16 (*)	A
PTOT	Total Dissipation at TC = 25°C	70	25	70	W
	Derating Factor	0.56	0.2	0.56	W/°C
VESD(G-S)	Gate source ESD(HBM-C=100pF, R=1.5KΩ)	3000			V
dv/dt (1)	Peak Diode Recovery voltage slope	4.5			V/ns
VISO	Insulation Withstand Voltage (DC)		2500		V
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 150 -55 to 150			°C

Description

The SuperMESH™ series STP4NK60ZFP is obtained through an extreme optimization of ST's well established strip-based Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is tak-en to ensure a very good dv/dt capability for the most demanding applications. Such series comple-ments ST full range of high voltage MOSFETs in-cluding revolutionary MDmesh™ products.