Features: · TYPICAL R DS(on) = 0.014 W· EXCEPTIONAL dv/dt CAPABILITY· LOW GATE CHARGE A 100 oC·APPLICATION ORIENTED CHARACTERIZATIONApplication·HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs· AU...
STP40NE03L-20: Features: · TYPICAL R DS(on) = 0.014 W· EXCEPTIONAL dv/dt CAPABILITY· LOW GATE CHARGE A 100 oC·APPLICATION ORIENTED CHARACTERIZATIONApplication·HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY...
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Features: `TYPICAL RDS(on)=0.016 `AVALANCHERUGGEDTECHNOLOGY`100%AVALANCHETESTED`HIGHCURRENTCAPABIL...
Symbol |
Parameter |
Value |
Unit | |
VDS |
Drain-source Voltage (VGS = 0) |
30 |
V | |
VDGR |
Drain-gate Voltage (RGS = 20 k ) |
30 |
V | |
VGS |
Gate- source Voltage |
±15 |
V | |
ID |
Drain Current (continuos) at TC = 25°C |
40 |
A | |
ID |
Drain Current (continuos) at TC = 100°C |
28 |
A | |
I DM () |
Drain Current (pulsed) |
160 |
A | |
PTOT |
Total Dissipation at TC = 25°C |
80 |
W | |
Derating Factor |
0.53 |
W/°C | ||
dv/d |
Peak Diode Recovery voltage slope |
7 |
V/ns | |
Tstg |
Storage Temperature |
65 to 175 175 |
||
Tj |
Max. Operating Junction Temperature |
°C |
This STP40NE03L-20 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility