STP40NE03L-20

Features: · TYPICAL R DS(on) = 0.014 W· EXCEPTIONAL dv/dt CAPABILITY· LOW GATE CHARGE A 100 oC·APPLICATION ORIENTED CHARACTERIZATIONApplication·HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY DRIVERS· MOTOR CONTROL, AUDIO AMPLIFIERS· DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs· AU...

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SeekIC No. : 004508430 Detail

STP40NE03L-20: Features: · TYPICAL R DS(on) = 0.014 W· EXCEPTIONAL dv/dt CAPABILITY· LOW GATE CHARGE A 100 oC·APPLICATION ORIENTED CHARACTERIZATIONApplication·HIGH CURRENT, HIGH SPEED SWITCHING· SOLENOID AND RELAY...

floor Price/Ceiling Price

Part Number:
STP40NE03L-20
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

· TYPICAL R DS(on) = 0.014 W
· EXCEPTIONAL dv/dt CAPABILITY
· LOW GATE CHARGE A 100 oC
·APPLICATION ORIENTED CHARACTERIZATION



Application

·HIGH CURRENT, HIGH SPEED SWITCHING
· SOLENOID AND RELAY DRIVERS
· MOTOR CONTROL, AUDIO AMPLIFIERS
· DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs
· AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
30
V
VDGR
Drain-gate Voltage (RGS = 20 k )
30
V
VGS
Gate- source Voltage
±15
V
ID
Drain Current (continuos) at TC = 25°C
40
A
ID
Drain Current (continuos) at TC = 100°C
28
A
I DM ()
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at TC = 25°C
80
W
Derating Factor
0.53
W/°C
dv/d
Peak Diode Recovery voltage slope
7
V/ns
Tstg
Storage Temperature
65 to 175

175
Tj
Max. Operating Junction Temperature
°C
(?)Pulse width limited by safe operating area
(1)ISD 40 A, di/dt 300A/s, VDD V (BR)DSS, Tj TJMAX



Description

This STP40NE03L-20 Power MOSFET is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility




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