STP40NF03L

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 40 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 22 mOhms
Gate-Source Breakdown Voltage : +/- 16 V


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL, AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	40	A
ID	Drain Current (continuous) at Tc = 100	28	A
IDM(•)	Drain Current (pulsed)	160	A
Ptot	Total Dissipation at Tc = 25	70	W
	Derating Factor	0.46	W/
EAS(1)	Single Pulse Avalanche Energy	250	m/J
Tstg	Storage Temperature	-65 to 175
Tj	Max. Operating Junction Temperature	175

Description

This STP40NF03L Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.