Position: Home  > All Categories> Integrated Circuits (ICs) > STP40N20

STP40N20

MOSFET N-Ch 200 Volt 40 Amp

product image

STP40N20 Picture
See larger image
SeekIC No. : 00162552 Detail

STP40N20: MOSFET N-Ch 200 Volt 40 Amp

STP40N20 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STP40N20
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.045 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 40 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.045 Ohms


Features:

TYPICAL RDS(on) = 0.038 Ω
GATE CHARGE MINIMIZED
VERY LOW INTRINSIC CAPACITANCES
VERY GOOD MANUFACTURING REPEATIBILITY
EXCELLENT FIGURE OF MERIT (RDS*Qg)
100% AVALANCHE TESTED


Application

HIGH CURRENT, HIGH SPEED SWITCHING
UPS


Specifications

Symbol Parameter Value Unit
VDS

Drain-source Voltage (VGS = 0)

 200 V
VDGR

Drain- gate Voltage (RGS = 20 k)

 200 V
VGS

Gate-source Voltage

 ±20 V
ID

Drain Current (continuous) at Tc = 25

40 A
ID

Drain Current (continuous) at Tc = 100

25 A
IDM(+)

Drain Current (pulsed)

 160 A
PTOT

Total Dissipation at Tc = 25

160 W

Derating Factor

 1.28 W/

 dv/dt(1)

 Peak Diode Recovery voltage slope

12

 V/ns

Tj
Tstg

Operating Junction Temperature
Storage Temperature

 -55 to 150



Description

This STP40N20 MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters.




Parameters:

Technical/Catalog InformationSTP40N20
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs45 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 2500pF @ 25V
Power - Max160W
PackagingTube
Gate Charge (Qg) @ Vgs75nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP40N20
STP40N20
497 4380 5 ND
49743805ND
497-4380-5



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Integrated Circuits (ICs)
TA8435H
1MB12-140
Isolators
HCPL062N
HCPL316J
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Test Equipment
TOP853
TOP2005
Line Protection, Backups
BX0023
A20B-1008-0550
Optoelectronics
SFH7770
TLP423J
View more