STP4NC60

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 2.2 Ohms
Continuous Drain Current : 4.2 A


Application

HIGH CURRENT, HIGH SPEED SWITCHING
SWITH MODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS


Specifications

Symbol	Parameter	Value		Unit
		STP(B)4NC60(-1)	STP4NC60FP
VDS	Drain-source Voltage (VGS =0)	600		V
VDGR	Drain-gate Voltage (RGS =20kΩ)	600		V
VGS	Gate- source Voltage	± 30		V
ID	Drain Current (continuous) at TC = 25°C	4.2	4.2 (*)	A
ID	Drain Current (continuous) at TC =100°C	2.6	2.6 (*)	A
IDM (· )	Drain Current (pulsed)	12.8	12.8(*)	A
PTOT	Total Dissipation at TC = 25°C	100	35	W
	Derating Factor	0.8	0.28	W/°C
dv/dt	Peak Diode Recovery voltage slope	3.5	3.5	V/ns
VISO	Insulation Withstand Voltage (DC)		2000	V
Tstg	Storage Temperature	-65to150		°C
Tj	Operating Junction Temperature			°C

Description

The STP4NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead-ing edge for what concerns swithing speed, gate charge and ruggedness.