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STP4NA80FI

Features: TYPE VDSS RDS(on) ID STP4NA80FI 800 V < 3 2.5A` TYPICAL RDS(on) = 2.4 n ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE DATA AT 100` LOW INTRINSIC CAPACITANCES` GATE GHARGE MINIMIZED` REDUCED THRESHOLD VOLTAGE SPREADApplic...

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SeekIC No. : 004508443 Detail

STP4NA80FI: Features: TYPE VDSS RDS(on) ID STP4NA80FI 800 V < 3 2.5A` TYPICAL RDS(on) = 2.4 n ± 30V GATE TO SOURCE VOLTAGE RATING` 100% AVALANCHE TESTED` REPETITIVE AVALANCHE DA...

STP4NA80FI Data Sheet

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Part Number:
STP4NA80FI
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

TYPE
VDSS
RDS(on)
ID
STP4NA80FI
800 V
< 3
2.5A

` TYPICAL RDS(on) = 2.4 n ± 30V GATE TO SOURCE VOLTAGE RATING
` 100% AVALANCHE TESTED
` REPETITIVE AVALANCHE DATA AT 100
` LOW INTRINSIC CAPACITANCES
` GATE GHARGE MINIMIZED
` REDUCED THRESHOLD VOLTAGE SPREAD


Application

· HIGH CURRENT, HIGH SPEED SWITCHING
· SWITCH MODE POWERSUPPLIES (SMPS)
· DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE


Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-sourceVoltage(VGS =0)
800
V
VDGR
 Drain-gateVoltage(RGS =20k)
800
V
VGS
 Gate-sourceVoltage
±30
V
ID
 DrainCurrent(continuous)atTc =25
2.5
A
ID
 Drain Current(continuous)atTc =100
1.6
A
IDM(`)
 Drain Current(pulsed)
16
A
Ptot
 Total DissipationatTC =25
1145
W
 Derating Factor
0.36
W/
VISO
 InsulationWithstandVoltage(DC)
2000
V
Tstg
 Storage Temperature
-65 to1 50
Tj
 Max.Operating Junction Temperature
150

(•) Pulse width limited by safe operating area


Description

This series of POWER MOSFETS STP4NA80FI represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.




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