STP40NF12

MOSFET N-Ch 120 Volt 40 Amp

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SeekIC No. : 00159004 Detail

STP40NF12: MOSFET N-Ch 120 Volt 40 Amp

floor Price/Ceiling Price

US $ .49~.62 / Piece | Get Latest Price
Part Number:
STP40NF12
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~620
  • 620~1000
  • 1000~2000
  • 2000~5000
  • Unit Price
  • $.62
  • $.53
  • $.5
  • $.49
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 120 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 32 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 40 A
Package / Case : TO-220
Drain-Source Breakdown Voltage : 120 V
Resistance Drain-Source RDS (on) : 32 mOhms


Features:

· TYPICAL R DS(on) = 0.028W
·EXCEPTIONAL dv/dt CAPABILITY
· 100% AVALANCHE TESTED
·APPLICATION ORIENTED CHARACTERIZATION



Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
120
V
VDGR
Drain-gate Voltage (RGS = 20 k )
120
V
VGS
Gate- source Voltage
±20
V
ID
Drain Current (continuos) at TC = 25°C
40
A
ID
Drain Current (continuos) at TC = 100°C
28
A
I DM ()
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at TC = 25°C
150
W
Derating Factor
1
W/°C
dv/d
Peak Diode Recovery voltage slope
14
V/ns
EAS (2)
Single Pulse Avalanche Energy
150
mJ
Tstg
Storage Temperature
55 to 175
Tj
Max. Operating Junction Temperature
°C
(•)Pulse width limited by safe operating area
(1)ISD 4 A, di/dt 100A/s, VDD V (BR)DSS, Tj TJMAX
(*) Limited only by Maximum Temperature Allowe



Description

This Power MOSFET series STP40NF12 realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC  converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.




Parameters:

Technical/Catalog InformationSTP40NF12
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs32 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 1880pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP40NF12
STP40NF12
497 4381 5 ND
49743815ND
497-4381-5



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