STP40NF10L

MOSFET N-Ch 100 Volt 40 Amp

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SeekIC No. : 00145973 Detail

STP40NF10L: MOSFET N-Ch 100 Volt 40 Amp

floor Price/Ceiling Price

US $ .88~1.37 / Piece | Get Latest Price
Part Number:
STP40NF10L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.37
  • $1.1
  • $.99
  • $.88
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/14

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 17 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.033 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Packaging : Tube
Continuous Drain Current : 40 A
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.033 Ohms
Gate-Source Breakdown Voltage : +/- 17 V


Features:

` TYPICAL RDS(on) = 0.028
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATION ORIENTED CHARACTERIZATION



Application

· HIGH-EFFICIENCY DC-DC CONVERTERS
· UPS AND MOTOR CONTROL
· AUTOMOTIVE



Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
100
V
VDGR
Drain-gate Voltage (RGS = 20 k)
100
V
VGS
Gate- source Voltage
± 17
V
ID
Drain Current (continuos) at TC = 25
40
A
ID
Drain Current (continuos) at TC = 100
25
A
IDM (l)
Drain Current (pulsed)
160
A
Ptot
Total Dissipation at TC = 25
150
mW
Derating Factor
1
W/
EAS (1)
Single Pulse Avalanche Energy
430
mJ
Tstg
Storage Temperature
-65 to 175
Tj
Max. Operating Junction Temperature
175
Pulse width limited by safe operating area
(1) Starting Tj = 25, ID = 20A, VDD = 40V


Description

This Power Mosfet series STP40NF10L realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements.




Parameters:

Technical/Catalog InformationSTP40NF10L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs33 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 2300pF @ 25V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs64nC @ 5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP40NF10L
STP40NF10L
497 6741 5 ND
49767415ND
497-6741-5



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