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STP180N55F3

MOSFET N Ch 600V 6A Hyper fast IGBT

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SeekIC No. : 00149379 Detail

STP180N55F3: MOSFET N Ch 600V 6A Hyper fast IGBT

STP180N55F3 Data Sheet

floor Price/Ceiling Price

US $ 1.82~2.85 / Piece | Get Latest Price
Part Number:
STP180N55F3
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $2.85
  • $2.41
  • $2.07
  • $1.82
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/6/10

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.0038 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0038 Ohms


Parameters:

Technical/Catalog InformationSTP180N55F3
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs3.8 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds 6800pF @ 25V
Power - Max330W
PackagingTube
Gate Charge (Qg) @ Vgs100nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP180N55F3
STP180N55F3
497 7512 5 ND
49775125ND
497-7512-5



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