STP180N55F3, US $ 1.82-2.85 , STMicroelectronics, STP180N55F3 DataSheet download, circuit diagram from SeekIC.com

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STP180N55F3: MOSFET N Ch 600V 6A Hyper fast IGBT

STP180N55F3 Data Sheet

US $ 1.82~2.85 / Piece | Get Latest Price

Part Number:: STP180N55F3
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/24

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	55 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	120 A
Resistance Drain-Source RDS (on) :	0.0038 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 175 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.0038 Ohms

Parameters:

Technical/Catalog Information	STP180N55F3
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	120A
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 60A, 10V
Input Capacitance (Ciss) @ Vds	6800pF @ 25V
Power - Max	330W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP180N55F3 STP180N55F3 497 7512 5 ND 49775125ND 497-7512-5

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STP180N55F3

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