ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERSSOLENOID AND RELAY DRIVERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 40 V VDGR Drain- gate Voltage (RGS = 20 k) 40 ...
STP100NF04L: ApplicationHIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERSSOLENOID AND RELAY DRIVERSSpecifications Symbol Parameter Value Unit VD...
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Symbol |
Parameter |
Value |
Unit |
VDS |
Drain-source Voltage (VGS = 0) |
40 |
V |
VDGR |
Drain- gate Voltage (RGS = 20 k) |
40 |
V |
VGS |
Gate-Source Voltage |
± 16 |
V |
ID |
Drain Current (continuous) at Tc = 25 |
100 |
A |
ID |
Drain Current (continuous) at Tc = 100 |
70 |
A |
IDM(`) |
Drain Current (pulsed) |
400 |
A |
PTOT |
Total Dissipation at Tc = 25 |
300 |
W |
Derating Factor |
2 |
W/
| |
dv/dt (1) |
Peak Diode Recovery voltage slope |
3.6 |
V/ns |
EAS (2) | Single Pulse Avalanche Energy | 1.4 | mJ |
Tstg |
Storage Temperature |
-55 to 150 |
|
Tj |
Max. Operating Junction Temperature |
175 |
|
This Power MOSFET STP100NF04L is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.