STP100NF04

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 40 V
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0046 Ohms


Features:

`  TYPICAL R<sub>DS(on)</sub> = 0.0043
`  STANDARD THRESHOLD DRIVE
` 100% AVALANCHE TESTED


Application

 · HIGH CURRENT, HIGH SWITCHING SPEED
 · MOTOR CONTROL, AUDIO AMPLIFIERS
 · DC-DC & DC-AC CONVERTERS
 · SOLENOID AND RELAY DRIVERS


Specifications

Symbol	Parameter	Value		Unit
VDS	Drain-source Voltage (VGS = 0)	40		V
VDGR	Drain-gate Voltage (RGS = 20 k)	40		V
VGS	Gate- source Voltage	± 20		V
ID	Drain Current (continuos) at TC = 25	120		A
ID(#)	Drain Current (continuos) at TC = 100	120		A
IDM(`)	Drain Current (pulsed)	480		A
PTOT	Total Dissipation at TC = 25	300		W
	Derating Factor	2		W/
dv/dt (1)	Peak Diode Recovery voltage slope	6		V/ns
EAS(2)	Single Pulse Avalanche Energy	1.2		J
Tj Tstg	Operating Junction Temperature Storage Temperature	-55 to 175

(`) Pulse width limited by safe operating area
(1) I_SD 120A, di/dt 300A/s, V_DD V_(BR)DSS, T_j T_JMAX.
(2) Starting T_j = 25°C, I_d = 60A, V_DD=30 V
(#) Current Limited by Package


Description

This Power Mosfet STP100NF04 is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.